"low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a GB70LA60UF vishay semiconductors document number: 93104 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 features ? npt warp 2 speed igbt technology with positive temperature coefficient ? square rbsoa ?low v ce(on) ?fred pt ? hyperfast rectifier ? fully isolated package ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec benefits ? designed for increased operating efficiency in power conversion: ups, smps, we lding, induction heating ? easy to assemble and parallel ? direct mounting to heatsink ? plug-in compatible with other sot-227 packages ? higher switching frequency up to 150 khz ? lower conduction losses and switching losses ? low emi, requires less snubbing product summary v ces 600 v i c dc 70 a at 88 c v ce(on) typical at 70 a, 25 c 2.4 v i f dc 70 a at 86 c sot-227 absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 111 a t c = 80 c 76 pulsed collector current i cm 120 clamped inductive load current i lm 120 diode continuous forward current i f t c = 25 c 113 t c = 80 c 75 peak diode forward current i fm 200 gate to emitter voltage v ge 20 v power dissipa tion, igbt p d t c = 25 c 447 w t c = 80 c 250 power dissipation, diode p d t c = 25 c 236 t c = 80 c 132 rms isolation voltage v isol any terminal to case, t = 1 min 2500 v www.datasheet.co.kr datasheet pdf - http://www..net/
GB70LA60UF vishay semiconductors "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93104 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units collector to em itter breakdown voltage v br(ces) v ge = 0 v, i c = 1 ma 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 35 a - 1.69 1.88 v ge = 15 v, i c = 70 a - 2.23 2.44 v ge = 15 v, i c = 35 a, t j = 125 c - 2.07 2.31 v ge = 15 v, i c = 70 a, t j = 125 c - 2.89 3.21 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 3 3.9 5 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 9 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 1 100 a v ge = 0 v, v ce = 600 v, t j = 125 c - 0.07 2.0 ma diode reverse breakdown voltage v br i r = 1 ma 600 - - v diode forward voltage drop v fm i c = 35 a, v ge = 0 v - 1.8 2.33 v i c = 70 a, v ge = 0 v - 2.13 2.71 i c = 35 a, v ge = 0 v, t j = 125 c - 1.35 1.81 i c = 70 a, v ge = 0 v, t j = 125 c - 1.7 2.32 diode reverse leakage current i rm v r = v r rated - 0.1 50 a t j = 125 c, v r = v r rated - 0.01 3 ma gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units total gate charge (turn-on) q g i c = 50 a, v cc = 400 v, v ge = 15 v - 320 - nc gate to emitter charge (turn-on) q ge -42- gate to collector charge (turn-on) q gc - 110 - turn-on switching loss e on i c = 70 a, v cc = 360 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 25 c energy losses include tail and diode recovery (see fig. 18) -1.15- mj turn-off switching loss e off -1.16- total switching loss e tot -2.31- turn-on switching loss e on i c = 70 a, v cc = 360 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 125 c -1.27- turn-off switching loss e off -1.28- total switching loss e tot -2.55- turn-on delay time t d(on) - 208 - ns rise time t r -69- turn-off delay time t d(off) - 208 - fall time t f - 100 - reverse bias safe operating area rbsoa t j = 150 c, i c = 120 a, r g = 22 ?? v ge = 15 v to 0 v, v cc = 400 v, v p = 600 v fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v -5993ns diode peak reverse current i rr -46a diode recovery charge q rr - 118 279 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v, t j = 125 c - 130 159 ns diode peak reverse current i rr -1113a diode recovery charge q rr - 715 995 nc www.datasheet.co.kr datasheet pdf - http://www..net/
GB70LA60UF "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a vishay semiconductors document number: 93104 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 1 - maximum dc ig bt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collector current characteristics fig. 4 - typical igbt zero gate voltage collector current thermal and mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 40 - 150 c thermal resistance, junction to case igbt r thjc - - 0.28 c/w diode - - 0.53 thermal resistance, case to sink per module r thcs -0.05- mounting torque, 6-32 or m3 screw - - 1.3 nm weight -30-g allowable case temperature (c) i c - continuous collector current (a) 0 20406080 120 100 0 160 100 120 140 20 40 60 80 i c (a) v ce (v) 1 10 100 1000 0.01 0.1 1 1000 10 100 i c (a) v ce (v) 024 135 0 200 25 50 100 75 150 125 175 t j = 125 c t j = 25 c i ces (ma) v ces (v) 100 200 300 400 500 600 0.0001 1 0.01 0.1 0.001 t j = 125 c t j = 25 c www.datasheet.co.kr datasheet pdf - http://www..net/
GB70LA60UF vishay semiconductors "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93104 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 5 - typical igbt threshold voltage fig. 6 - typical igbt colle ctor to emitter voltage vs. junction temperature, v ge = 15 v fig. 7 - maximum dc forward current vs. case temperature fig. 8 - typical diode forward characteristics fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 360 v, r g = 5 ? , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 360 v, r g = 5 ? , v ge = 15 v v geth (v) i c (ma) 0.0002 0.0004 0.0006 0.0008 0.001 2.0 4.5 3.0 3.5 4.0 2.5 t j = 25 c t j = 125 c v ce (v) t j (c) 10 50 90 30 70 130 110 150 1 4 3 2 100 a 70 a 35 a allowable case temperature (c) i f - continuous forward current (a) 020 60 100 40 80 120 0 160 100 120 140 20 40 60 80 i f (a) v fm (v) 0 0.5 1.5 1.0 2.0 2.5 3.0 3.5 0 200 25 75 100 150 125 175 50 t j = 125 c t j = 25 c energy (mj) i c (a) 0 20406080 0.00 1.50 0.50 1.00 0.75 1.25 0.25 e off e on switching time (ns) i c (a) 010 70 30 50 60 40 20 80 10 1000 100 t d(off) t d(on) t f t r www.datasheet.co.kr datasheet pdf - http://www..net/
GB70LA60UF "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a vishay semiconductors document number: 93104 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 fig. 11 - typical t rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 12 - typical i rr diode vs. di f /dt v rr = 200 v, i f = 50 a fig. 13 - typical q rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 14 - maximum thermal impedance z thjc characteristics (igbt) t rr (ns) di f /dt (a/s) 100 1000 20 170 45 95 120 145 70 t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 30 10 20 5 15 25 t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 50 1250 450 850 250 650 1050 t j = 125 c t j = 25 c 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 100 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc www.datasheet.co.kr datasheet pdf - http://www..net/
GB70LA60UF vishay semiconductors "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93104 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 15 - maximum thermal impedance z thjc characteristics (diode) fig. 16a - clamped inductive load test circuit fig. 16b - pulsed collector current test circuit fig. 17a - switching loss test circuit 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 100 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc * driver same type as d.u.t.; v c = 80 % of v ce(max) * note: due to the 50 v power supply, pulse width and inductor will increase to obtain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + - www.datasheet.co.kr datasheet pdf - http://www..net/
GB70LA60UF "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a vishay semiconductors document number: 93104 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 fig. 17b - switching loss waveforms test circuit ordering information table t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 3 - current rating (70 = 70 a) 4 - circuit configuration (l = low side chopper) 5 - package indicator (a = sot-227) 6 - voltage rating (60 = 600 v) 8 - f = f/w fred pt ? diode 7 - speed/type (u = ultrafast igbt) device code 5 13 24 678 g b 70 l a 60 u f www.datasheet.co.kr datasheet pdf - http://www..net/
GB70LA60UF vishay semiconductors "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93104 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 circuit configuration 2 1 3 4 links to related documents dimensions http://www.vishay.com/doc?95036 packaging information http://www.vishay.com/doc?95037 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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